ROHM R6030ENZ4C13
Manufacturer No:
R6030ENZ4C13
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel 130m ? @ 14.5A, 10V ±20V 2100pF @ 25V 85nC @ 10V 600V TO-247-3
Quantity:
In Stock :6487
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6030ENZ4C13 Information
ROHM R6030ENZ4C13 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6030ENZ4C13.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 305W Tc
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6030ENZ4C13.
R6030ENZ4C13 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 636 mJ.A device's maximum input capacitance is 2100pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 30A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R6030ENZ4C13 Features
the avalanche energy rating (Eas) is 636 mJ
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
R6030ENZ4C13 Applications
There are a lot of ROHM Semiconductor
R6030ENZ4C13 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
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