ROHM R6024ENZ1C9
Manufacturer No:
R6024ENZ1C9
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 165m ? @ 11.3A, 10V ±20V 1650pF @ 25V 70nC @ 10V 600V TO-247-3
Quantity:
In Stock :4858
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6024ENZ1C9 Information
ROHM R6024ENZ1C9 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6024ENZ1C9.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2014
- Part Status
- Last Time Buy
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 120W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6024ENZ1C9.
R6024ENZ1C9 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 497 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1650pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 24A amps.As far as peak drain current is concerned, its maximum pulsed current is 72A.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
R6024ENZ1C9 Features
the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 24A
based on its rated peak drain current 72A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6024ENZ1C9 Applications
There are a lot of ROHM Semiconductor
R6024ENZ1C9 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
