ROHM R6024ENXC7G

Manufacturer No:

R6024ENXC7G

Manufacturer:

ROHM

Package:

TO-220FM, 3 PIN

Description:

Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Quantity:

In Stock :2184

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

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Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6024ENXC7G Information

ROHM R6024ENXC7G technical specifications, attributes, parameters and parts with similar specifications to ROHM R6024ENXC7G.

Type
Parameter

RoHS Status
RoHS Compliant

Part Life Cycle Code
Active

Ihs Manufacturer
ROHM CO LTD

Package Description
TO-220FM, 3 PIN

Reach Compliance Code
compliant

ECCN Code
EAR99

Factory Lead Time
18 Weeks

Samacsys Manufacturer
ROHM Semiconductor

Avalanche Energy Rating (Eas)
497 mJ

Case Connection
ISOLATED

Type
Parameter

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
600 V

Drain Current-Max (ID)
24 A

Drain-source On Resistance-Max
0.165 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)
160 pF

JEDEC-95 Code
TO-220AB

JESD-30 Code
R-PSFM-T3

Number of Elements
1

Number of Terminals
3

Download datasheets and manufacturer documentation for ROHM R6024ENXC7G.

R6024ENXC7G Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1650 pF @ 25 V.This transistor requires a drain-source voltage (Vdss) of 600 V.