ROHM R6020KNZ4C13
Manufacturer No:
R6020KNZ4C13
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel 196m ? @ 9.5A, 10V ±20V 1550pF @ 25V 40nC @ 10V 600V TO-247-3
Quantity:
In Stock :8922
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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R6020KNZ4C13 Information
ROHM R6020KNZ4C13 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6020KNZ4C13.
- Type
- Parameter
- Factory Lead Time
- 8 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 231W Tc
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
Download datasheets and manufacturer documentation for ROHM R6020KNZ4C13.
R6020KNZ4C13 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 418 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1550pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 20A.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
R6020KNZ4C13 Features
the avalanche energy rating (Eas) is 418 mJ
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)
R6020KNZ4C13 Applications
There are a lot of ROHM Semiconductor
R6020KNZ4C13 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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