ROHM R6020FNJTL
Manufacturer No:
R6020FNJTL
Manufacturer:
ROHM
Package:
SC
Description:
Cut Tape (CT) 600V SC
Quantity:
In Stock :1115
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6020FNJTL Information
ROHM R6020FNJTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6020FNJTL.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Surface Mount
- Package / Case
- SC
- Number of Pins
- 83
- Transistor Element Material
- SILICON
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Max Power Dissipation
- 50W
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6020FNJTL.
R6020FNJTL Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 26.7 mJ.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 80A.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 220mOhm, which means the device is not biased.This transistor requires a drain-source voltage (Vdss) of 600V.
R6020FNJTL Features
the avalanche energy rating (Eas) is 26.7 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 80A.
single MOSFETs transistor is 220mOhm
a 600V drain to source voltage (Vdss)
R6020FNJTL Applications
There are a lot of ROHM Semiconductor
R6020FNJTL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
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