ROHM R6020ENZ1C9
Manufacturer No:
R6020ENZ1C9
Manufacturer:
ROHM
Package:
TO-247-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 196m ? @ 9.5A, 10V ±20V 1400pF @ 25V 60nC @ 10V 600V TO-247-3
Quantity:
In Stock :4800
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6020ENZ1C9 Information
ROHM R6020ENZ1C9 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6020ENZ1C9.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2014
- Part Status
- Last Time Buy
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 120W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6020ENZ1C9.
R6020ENZ1C9 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.Peak drain current for this device is 80A, which is its maximum pulsed drain current.4V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
R6020ENZ1C9 Features
a continuous drain current (ID) of 20A
based on its rated peak drain current 80A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6020ENZ1C9 Applications
There are a lot of ROHM Semiconductor
R6020ENZ1C9 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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12.28 M
Listed Part Number
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