R6015FNX-ROHM-Price, Stock & Datasheet

R6015FNX Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 15 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1660pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 120 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 38 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6015FNX Features

the avalanche energy rating (Eas) is 15 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 120 ns
based on its rated peak drain current 60A.
a 600V drain to source voltage (Vdss)