ROHM R6015ANZFU7C8
Manufacturer No:
R6015ANZFU7C8
Manufacturer:
ROHM
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel 300m ? @ 7.5A, 10V ±30V 1.7nF @ 25V 50nC @ 10V 600V TO-3P-3 Full Pack
Quantity:
In Stock :1373
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
Step3：Vacuum Packaging
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Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6015ANZFU7C8 Information
ROHM R6015ANZFU7C8 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6015ANZFU7C8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Operating Temperature
- 150°C TJ
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 110W Tc
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 300m ? @ 7.5A, 10V
- Vgs(th) (Max) @ Id
- 4.15V @ 1mA
- Type
- Parameter
- Input Capacitance (Ciss) (Max) @ Vds
- 1.7nF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 15A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ROHM R6015ANZFU7C8.
R6015ANZFU7C8 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.7nF @ 25V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
R6015ANZFU7C8 Features
a 600V drain to source voltage (Vdss)
R6015ANZFU7C8 Applications
There are a lot of ROHM Semiconductor
R6015ANZFU7C8 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
