ROHM R6012JNJGTL
Manufacturer No:
R6012JNJGTL
Manufacturer:
ROHM
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 390m ? @ 6A, 15V ±30V 900pF @ 100V 28nC @ 15V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :7603
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6012JNJGTL Information
ROHM R6012JNJGTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6012JNJGTL.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 160W Tc
Download datasheets and manufacturer documentation for ROHM R6012JNJGTL.
R6012JNJGTL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 327 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 900pF @ 100V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 12A.Peak drain current is 36A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (15V), this device contributes to a reduction in overall power consumption.
R6012JNJGTL Features
the avalanche energy rating (Eas) is 327 mJ
based on its rated peak drain current 36A.
a 600V drain to source voltage (Vdss)
R6012JNJGTL Applications
There are a lot of ROHM Semiconductor
R6012JNJGTL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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