ROHM R6012FNX
Manufacturer No:
R6012FNX
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 510m ? @ 6A, 10V ±30V 1300pF @ 25V 35nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :5150
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6012FNX Information
ROHM R6012FNX technical specifications, attributes, parameters and parts with similar specifications to ROHM R6012FNX.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2013
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 50W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- ISOLATED
- Turn On Delay Time
- 30 ns
Download datasheets and manufacturer documentation for ROHM R6012FNX.
R6012FNX Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 9.6 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 25V.This device has a continuous drain current (ID) of [12A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 77 ns.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
R6012FNX Features
the avalanche energy rating (Eas) is 9.6 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 77 ns
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)
R6012FNX Applications
There are a lot of ROHM Semiconductor
R6012FNX applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
