ROHM R6008ANX
Manufacturer No:
R6008ANX
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 800m ? @ 4A, 10V ±30V 680pF @ 25V 21nC @ 10V TO-220-3 Full Pack
Quantity:
In Stock :3239
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6008ANX Information
ROHM R6008ANX technical specifications, attributes, parameters and parts with similar specifications to ROHM R6008ANX.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2012
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Subcategory
- FET General Purpose Powers
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Power Dissipation-Max
- 50W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for ROHM R6008ANX.
R6008ANX Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4.3 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 680pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 32A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
R6008ANX Features
the avalanche energy rating (Eas) is 4.3 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 32A.
R6008ANX Applications
There are a lot of ROHM Semiconductor
R6008ANX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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