ROHM R6007KNX
Manufacturer No:
R6007KNX
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 620m ? @ 2.4A, 10V ±20V 470pF @ 25V 14.5nC @ 10V 600V TO-220-3 Full Pack
Quantity:
In Stock :1659
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6007KNX Information
ROHM R6007KNX technical specifications, attributes, parameters and parts with similar specifications to ROHM R6007KNX.
- Type
- Parameter
- Factory Lead Time
- 40 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 46W Tc
Download datasheets and manufacturer documentation for ROHM R6007KNX.
R6007KNX Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 133 mJ.The maximum input capacitance of this device is 470pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7A.There is no pulsed drain current maximum for this device based on its rated peak drain current 21A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
R6007KNX Features
the avalanche energy rating (Eas) is 133 mJ
based on its rated peak drain current 21A.
a 600V drain to source voltage (Vdss)
R6007KNX Applications
There are a lot of ROHM Semiconductor
R6007KNX applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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