ROHM R6007JND3TL1
Manufacturer No:
R6007JND3TL1
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 780m ? @ 3.5A, 15V ±30V 475pF @ 100V 17.5nC @ 15V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :3332
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6007JND3TL1 Information
ROHM R6007JND3TL1 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6007JND3TL1.
- Type
- Parameter
- Factory Lead Time
- 18 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 96W Tc
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R6007JND3TL1.
R6007JND3TL1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 132 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 475pF @ 100V.The drain current is the maximum continuous current this device can conduct, which is 7A.Pulsed drain current is maximum rated peak drain current 21A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 15V volts (15V).
R6007JND3TL1 Features
the avalanche energy rating (Eas) is 132 mJ
based on its rated peak drain current 21A.
a 600V drain to source voltage (Vdss)
R6007JND3TL1 Applications
There are a lot of ROHM Semiconductor
R6007JND3TL1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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