ROHM R6006ANDTL
Manufacturer No:
R6006ANDTL
Manufacturer:
ROHM
Package:
TO-252-3
Description:
Tape & Reel (TR) 600V TO-252-3
Quantity:
In Stock :5327
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6006ANDTL Information
ROHM R6006ANDTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6006ANDTL.
- Type
- Parameter
- Factory Lead Time
- 17 Weeks
- Mount
- Surface Mount
- Package / Case
- TO-252-3
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Max Operating Temperature
- 150°C
- Type
- Parameter
- Min Operating Temperature
- -55°C
- Max Power Dissipation
- 40W
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number of Channels
- 1
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 22 ns
Download datasheets and manufacturer documentation for ROHM R6006ANDTL.
R6006ANDTL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2.4 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 24A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 900mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).
R6006ANDTL Features
the avalanche energy rating (Eas) is 2.4 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 24A.
single MOSFETs transistor is 900mOhm
a 600V drain to source voltage (Vdss)
R6006ANDTL Applications
There are a lot of ROHM Semiconductor
R6006ANDTL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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