ROHM R6004ENJTL
Manufacturer No:
R6004ENJTL
Manufacturer:
ROHM
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 980m ? @ 1.5A, 10V ±20V 250pF @ 25V 15nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :4231
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6004ENJTL Information
ROHM R6004ENJTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6004ENJTL.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 83
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2016
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM R6004ENJTL.
R6004ENJTL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 46 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4A.As shown in the table below, the drain current of this device is 4A.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
R6004ENJTL Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6004ENJTL Applications
There are a lot of ROHM Semiconductor
R6004ENJTL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
