ROHM R6004ENDTL
Manufacturer No:
R6004ENDTL
Manufacturer:
ROHM
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 980m ? @ 1.5A, 10V ±20V 250pF @ 25V 15nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5724
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R6004ENDTL Information
ROHM R6004ENDTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R6004ENDTL.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM R6004ENDTL.
R6004ENDTL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 46 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 250pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.A maximum pulsed drain current of 8A is the maximum peak drain current rated for this device.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
R6004ENDTL Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
R6004ENDTL Applications
There are a lot of ROHM Semiconductor
R6004ENDTL applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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