ROHM R5021ANX
Manufacturer No:
R5021ANX
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 210m ? @ 10.5A, 10V ±30V 2300pF @ 25V 64nC @ 10V 500V TO-220-3 Full Pack
Quantity:
In Stock :8577
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R5021ANX Information
ROHM R5021ANX technical specifications, attributes, parameters and parts with similar specifications to ROHM R5021ANX.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2012
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Not For New Designs
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for ROHM R5021ANX.
R5021ANX Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 29.6 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 21A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 84A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
R5021ANX Features
the avalanche energy rating (Eas) is 29.6 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 84A.
a 500V drain to source voltage (Vdss)
R5021ANX Applications
There are a lot of ROHM Semiconductor
R5021ANX applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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