ROHM R5016FNX
Manufacturer No:
R5016FNX
Manufacturer:
ROHM
Package:
FLANGE MOUNT, R-PSFM-T3
Description:
Description: Power Field-Effect Transistor, 16A I(D), 500V, 0.325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Quantity:
In Stock :2500
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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R5016FNX Information
ROHM R5016FNX technical specifications, attributes, parameters and parts with similar specifications to ROHM R5016FNX.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- FLANGE MOUNT, R-PSFM-T3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- ROHM Semiconductor
- Avalanche Energy Rating (Eas)
- 17.1 mJ
- Case Connection
- ISOLATED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Type
- Parameter
- DS Breakdown Voltage-Min
- 500 V
- Drain Current-Max (ID)
- 16 A
- Drain-source On Resistance-Max
- 0.325 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-220AB
- JESD-30 Code
- R-PSFM-T3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R5016FNX.
R5016FNX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 17.1 mJ.A device's maximum input capacitance is 1700pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
R5016FNX Features
the avalanche energy rating (Eas) is 17.1 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 110 ns
based on its rated peak drain current 64A.
a 500V drain to source voltage (Vdss)
R5016FNX Applications
There are a lot of ROHM Semiconductor
R5016FNX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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