ROHM R5016ANX
Manufacturer No:
R5016ANX
Manufacturer:
ROHM
Package:
FLANGE MOUNT, R-PSFM-T3
Description:
Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Quantity:
In Stock :5839
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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R5016ANX Information
ROHM R5016ANX technical specifications, attributes, parameters and parts with similar specifications to ROHM R5016ANX.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Part Package Code
- TO-220AB
- Package Description
- FLANGE MOUNT, R-PSFM-T3
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Avalanche Energy Rating (Eas)
- 18 mJ
- Type
- Parameter
- Case Connection
- ISOLATED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 500 V
- Drain Current-Max (ID)
- 16 A
- Drain-source On Resistance-Max
- 0.27 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-220AB
- JESD-30 Code
- R-PSFM-T3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
Download datasheets and manufacturer documentation for ROHM R5016ANX.
R5016ANX Overview
The maximum input capacitance of this device is 1800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 150 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 64A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
R5016ANX Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 64A.
R5016ANX Applications
There are a lot of ROHM Semiconductor
R5016ANX applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
