ROHM R5011ANJTL
Manufacturer No:
R5011ANJTL
Manufacturer:
ROHM
Package:
SMALL OUTLINE, R-PSSO-G2
Description:
Description: Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN
Quantity:
In Stock :7411
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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R5011ANJTL Information
ROHM R5011ANJTL technical specifications, attributes, parameters and parts with similar specifications to ROHM R5011ANJTL.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- SMALL OUTLINE, R-PSSO-G2
- Pin Count
- 3
- Reach Compliance Code
- not_compliant
- ECCN Code
- EAR99
- Avalanche Energy Rating (Eas)
- 8.1 mJ
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Type
- Parameter
- DS Breakdown Voltage-Min
- 500 V
- Drain Current-Max (ID)
- 11 A
- Drain-source On Resistance-Max
- 0.5 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PSSO-G2
- JESD-609 Code
- e2
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 2
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM R5011ANJTL.
R5011ANJTL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1000pF @ 25V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 44A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 26 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
R5011ANJTL Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 44A.
R5011ANJTL Applications
There are a lot of ROHM Semiconductor
R5011ANJTL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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