R5009FNX-ROHM-Price, Stock & Datasheet

R5009FNX Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5.4 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 630pF @ 25V.This device has a continuous drain current (ID) of [9A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 9A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

R5009FNX Features

the avalanche energy rating (Eas) is 5.4 mJ
a continuous drain current (ID) of 9A
the turn-off delay time is 50 ns
a 500V drain to source voltage (Vdss)