ROHM R5007FNX
Manufacturer No:
R5007FNX
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 1.3 ? @ 3.5A, 10V ±30V 450pF @ 25V 15nC @ 10V 500V TO-220-3 Full Pack
Quantity:
In Stock :7063
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R5007FNX Information
ROHM R5007FNX technical specifications, attributes, parameters and parts with similar specifications to ROHM R5007FNX.
- Type
- Parameter
- Factory Lead Time
- 10 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2011
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 40W Tc
Download datasheets and manufacturer documentation for ROHM R5007FNX.
R5007FNX Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3.2 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 450pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 28A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
R5007FNX Features
the avalanche energy rating (Eas) is 3.2 mJ
a continuous drain current (ID) of 7A
based on its rated peak drain current 28A.
a 500V drain to source voltage (Vdss)
R5007FNX Applications
There are a lot of ROHM Semiconductor
R5007FNX applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
