Renesas R1RW0416DGE-2PR#B1
Manufacturer No:
R1RW0416DGE-2PR#B1
Manufacturer:
Renesas
Package:
Description:
4M High-Speed SRAM (256-kword × 16-bit)
Quantity:
In Stock :4939
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R1RW0416DGE-2PR#B1 Information
Renesas R1RW0416DGE-2PR#B1 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1RW0416DGE-2PR#B1.
- Type
- Parameter
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- 3
- Price (USD) | 1ku
- 5.1132
- Access Time (ns)
- 12
- Bus Width (bits)
- 16
- Core Voltage (V)
- 3.3
- Density (Kb)
- 4096
- I/O Voltage (V)
- 3.3 -
- Lead Compliant
- Yes
- Lead Count (#)
- 44
- Type
- Parameter
- Length (mm)
- 28
- MOQ
- 1
- Memory Capacity (kbit)
- 4000
- Organization
- 256K x 16
- Organization (bit)
- x 16
- Pb (Lead) Free
- Yes
- Pkg. Dimensions (mm)
- 28 x 10 x 3.55
- Pkg. Type
- SOJ
- Remarks
- Contact us for Successor Products information.
- Supply Voltage (V)
- 3.0 - 3.6
Download datasheets and manufacturer documentation for Renesas R1RW0416DGE-2PR#B1.
Datasheet:
The R1RW0416D is a 4Mbit high-speed static RAM organized 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory, and a wide bit width configuration, such as cache and buffer memory in systems. Especially, the L version and S version are low-power consumption and are the best for the battery backup systems. The package prepares a 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high-density surface mounting.
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 10ns/12ns (max)
- Completely static memory, no clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible, all inputs and outputs
- Operating current: 145mA/130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max): 0.8mA (max) (L-version): 0.5mA (max) (S-version)
- Data retention current: 0.4mA (max) (L-version): 0.2mA (max) (S-version)
- Data retention voltage: 2.0V (min) (L-version, S-version)
- Center VCC and VSS type pinout
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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