Renesas R1RP0408DGE-2LR#B1
Manufacturer No:
R1RP0408DGE-2LR#B1
Manufacturer:
Renesas
Package:
Description:
4M High-speed SRAM (512-kword × 8-bit)
Quantity:
In Stock :9208
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R1RP0408DGE-2LR#B1 Information
Renesas R1RP0408DGE-2LR#B1 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1RP0408DGE-2LR#B1.
- Type
- Parameter
- Carrier Type
- Tube
- Moisture Sensitivity Level (MSL)
- 3
- Country of Assembly
- Taiwan
- Country of Wafer Fabrication
- Japan
- Price (USD) | 1ku
- 4.9905
- Access Time (ns)
- 12
- Bus Width (bits)
- 8
- Core Voltage (V)
- 5
- Density (Kb)
- 4096
- I/O Voltage (V)
- 5 -
- Type
- Parameter
- Lead Compliant
- Yes
- Lead Count (#)
- 36
- Length (mm)
- 23
- MOQ
- 1
- Memory Capacity (kbit)
- 4000
- Organization
- 512K x 8
- Organization (bit)
- x 8
- Pb (Lead) Free
- Yes
- Pkg. Dimensions (mm)
- 23 x 10 x 3.55
- Pkg. Type
- SOJ
Download datasheets and manufacturer documentation for Renesas R1RP0408DGE-2LR#B1.
Datasheet:
The R1RP0408D Series is a 4Mbit high-speed static RAM organized 512-k word × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 36-pin plastic SOJ.
- Single 5.0V supply: 5.0V ± 10%
- Access time: 12ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max), 1.0mA (max) (L-version)
- Data retention current: 0.5mA (max) (L-version)
- Data retention voltage: 2.0V (min) (L-version)
- Center VCC and VSS type pinout
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