Renesas R1QDA7236ABB-19IB1
Manufacturer No:
R1QDA7236ABB-19IB1
Manufacturer:
Renesas
Package:
Description:
72-Mbit QDR™II+ SRAM 4-word Burst
Quantity:
In Stock :1511
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R1QDA7236ABB-19IB1 Information
Renesas R1QDA7236ABB-19IB1 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1QDA7236ABB-19IB1.
- Type
- Parameter
- Pkg. Type
- LBGA
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- 3
- Architecture
- QDR-II+ with ODT
- Burst Length (Words)
- 4
- Data Width (bits)
- 36000
- Density (Kb)
- 72000
- Frequency (Max) (MHz)
- 533
- Lead Compliant
- No
- Lead Count (#)
- 165
- Type
- Parameter
- Length (mm)
- 15
- MIN Frequency (MHz)
- 250
- MOQ
- 1
- Pb (Lead) Free
- Yes
- Pkg. Dimensions (mm)
- 15 x 13 x 1.4
- Read Latency (Clock)
- 2.5
- Tape & Reel
- No
- Thickness (mm)
- 1.4
- Width (mm)
- 13
- Moisture Sensitivity Level (MSL)
- 3
Download datasheets and manufacturer documentation for Renesas R1QDA7236ABB-19IB1.
The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
- Power Supply · 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
- Clock · Fast clock cycle time for high bandwidth · Two input clocks (K and /K) for precise DDR timing at clock rising edges only · Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems · Clock-stop capability with μs restart
- I/O · Separate independent read and write data ports with concurrent transactions · 100% bus utilization DDR read and write operation · HSTL I/O · User programmable output impedance · DLL/PLL circuitry for wide output data valid window and future frequency scaling · Data valid pin (QVLD) to indicate valid data on the output
- Function · Four-tick burst for reduced address frequency · Internally self-timed write control · Simple control logic for easy depth expansion · JTAG 1149.1 compatible test access port
- Package · 165 FBGA package (13 x 15 x 1.4 mm) · RoHS Compliance Level = 6/6
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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