Renesas R1EV5801MBTDRDI#B0
Manufacturer No:
R1EV5801MBTDRDI#B0
Manufacturer:
Renesas
Package:
Description:
1M EEPROM (128-Kword × 8-bit)Ready/ Busy and RES function
Quantity:
In Stock :7519
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R1EV5801MBTDRDI#B0 Information
Renesas R1EV5801MBTDRDI#B0 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1EV5801MBTDRDI#B0.
- Type
- Parameter
- Access Time (ns)
- 250
- Application
- Consumer/Industrial
- Family Name
- Parallel EEPROM
- Lead Compliant
- Yes
- Lead Count (#)
- 32
- Length (mm)
- 12
- MOQ
- 1
- Memory Capacity (kbit)
- 1000
- Moisture Sensitivity Level (MSL)
- 3
- Organization (bit)
- x 8
- Type
- Parameter
- Organization (kword)
- 128
- Pb (Lead) Free
- Yes
- Pkg. Dimensions (mm)
- 12 x 8 x 1.2
- Pkg. Type
- TSOP(1)
- Remarks
- with reset function
- Supply Voltage (V)
- 2.7 - 5.5
- Tape & Reel
- No
- Thickness (mm)
- 1.2
- Width (mm)
- 8
- ECCN (US)
- EAR99
Download datasheets and manufacturer documentation for Renesas R1EV5801MBTDRDI#B0.
Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word 8-bit. It has realized High-Speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.
- Single voltage supply: 2.7 V to 5.5 V
- Access time: 150 ns (max) at Vcc=4.5 V to 5.5 V 250 ns (max) at Vcc=2.7 V to 5.5 V
- Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 μW (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
- Automatic page write (128 bytes): 10 ms (max)
- Data polling and RDY/Busy
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard
- Reliable CMOS with MONOS cell technology
- 104 or more erase/write cycles
- 10 or more years data retention
- Software data protection
- Write protection by RES pin
- Temperature range: -40 to +85°C
- There are lead free products.
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