

ROHM QST4TR
Manufacturer No:
QST4TR
Manufacturer:
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
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QST4TR information
ROHM QST4TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QST4TR.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1.25W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 10
- Base Part Number
- QST
- Pin Count
- 6
- Number of Elements
- 1
- Element Configuration
- Single
- Gain Bandwidth Product
- 280MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 12V
- Max Collector Current
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 270 @ 500mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 30mA, 1.5A
- Collector Emitter Breakdown Voltage
- 12V
- Current - Collector (Ic) (Max)
- 3A
- Transition Frequency
- 280MHz
- Collector Base Voltage (VCBO)
- 15V
- Emitter Base Voltage (VEBO)
- 6V
- hFE Min
- 270
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ROHM QST4TR.
Datasheets:
QST4TR Overview
In this device, the DC current gain is 270 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 30mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
QST4TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
QST4TR Applications
There are a lot of ROHM Semiconductor
QST4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

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Step4:Individual Package

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Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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