ROHM QS6U22TR
Manufacturer No:
QS6U22TR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 215m ? @ 1.5A, 4.5V ±12V 270pF @ 10V 3nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :3918
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
QS6U22TR Information
ROHM QS6U22TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS6U22TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ROHM QS6U22TR.
QS6U22TR Overview
A device's maximum input capacitance is 270pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -2V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
QS6U22TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 45 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)
QS6U22TR Applications
There are a lot of ROHM Semiconductor
QS6U22TR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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