ROHM QS5U36TR
ROHM QS5U36TR

ROHM QS5U36TR

Manufacturer No:

QS5U36TR

Manufacturer:

ROHM

Package:

SOT-23-5 Thin, TSOT-23-5

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 81m ? @ 2.5A, 4.5V ±10V 280pF @ 10V 3.5nC @ 4.5V SOT-23-5 Thin, TSOT-23-5

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

QS5U36TR information

ROHM QS5U36TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U36TR.

  • Type
  • Parameter
  • Factory Lead Time
  • 20 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • SOT-23-5 Thin, TSOT-23-5
  • Number of Pins
  • 5
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2008
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 5
  • ECCN Code
  • EAR99
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 1.25W Ta
  • Element Configuration
  • Single
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 900mW
  • Turn On Delay Time
  • 6 ns
  • FET Type
  • N-Channel
  • Rds On (Max) @ Id, Vgs
  • 81m ? @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id
  • 1.3V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
  • 280pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
  • 2.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
  • 3.5nC @ 4.5V
  • Rise Time
  • 15ns
  • Drive Voltage (Max Rds On,Min Rds On)
  • 1.5V 4.5V
  • Vgs (Max)
  • ±10V
  • Fall Time (Typ)
  • 15 ns
  • Turn-Off Delay Time
  • 30 ns
  • Continuous Drain Current (ID)
  • 2.5A
  • Gate to Source Voltage (Vgs)
  • 10V
  • Drain-source On Resistance-Max
  • 0.104Ohm
  • Drain to Source Breakdown Voltage
  • 20V
  • FET Feature
  • Schottky Diode (Isolated)
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ROHM QS5U36TR.

QS5U36TR Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 280pF @ 10V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

QS5U36TR Features


a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns


QS5U36TR Applications


There are a lot of ROHM Semiconductor
QS5U36TR applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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Step1:Prepare product

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Step2:Desiccant Protection

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Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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