ROHM QS5U33TR

Manufacturer No:

QS5U33TR

Manufacturer:

ROHM

Package:

SOT-23-5 Thin, TSOT-23-5

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 135m ? @ 2A, 10V ±20V 310pF @ 10V 3.4nC @ 5V 30V SOT-23-5 Thin, TSOT-23-5

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QS5U33TR information

ROHM QS5U33TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U33TR.

Type
Parameter

Factory Lead Time
20 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SOT-23-5 Thin, TSOT-23-5

Number of Pins
5

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e1

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

Termination
SMD/SMT

ECCN Code
EAR99

Terminal Finish
TIN SILVER COPPER

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
10

Pin Count
5

Power Dissipation-Max
1.25W Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.25W

Turn On Delay Time
7 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
135m ? @ 2A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
310pF @ 10V

Current - Continuous Drain (Id) @ 25°C
2A Ta

Gate Charge (Qg) (Max) @ Vgs
3.4nC @ 5V

Rise Time
6ns

Drain to Source Voltage (Vdss)
30V

Drive Voltage (Max Rds On,Min Rds On)
4V 10V

Vgs (Max)
±20V

Fall Time (Typ)
6 ns

Turn-Off Delay Time
25 ns

Continuous Drain Current (ID)
2A

Gate to Source Voltage (Vgs)
20V

Drain Current-Max (Abs) (ID)
2A

Drain to Source Breakdown Voltage
-30V

Dual Supply Voltage
-30V

Download datasheets and manufacturer documentation for ROHM QS5U33TR.

QS5U33TR Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 310pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.

QS5U33TR Features

a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
a 30V drain to source voltage (Vdss)

QS5U33TR Applications

There are a lot of ROHM Semiconductor
QS5U33TR applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

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