ROHM QS5U33TR
Manufacturer No:
QS5U33TR
Manufacturer:
Package:
SOT-23-5 Thin, TSOT-23-5
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 135m ? @ 2A, 10V ±20V 310pF @ 10V 3.4nC @ 5V 30V SOT-23-5 Thin, TSOT-23-5
Quantity:
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QS5U33TR Information
ROHM QS5U33TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U33TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for ROHM QS5U33TR.
QS5U33TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 310pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4V 10V), this device helps reduce its overall power consumption.
QS5U33TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 25 ns
a 30V drain to source voltage (Vdss)
QS5U33TR Applications
There are a lot of ROHM Semiconductor
QS5U33TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
QS5U33TR Relevant information
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