ROHM QS5U26TR
Manufacturer No:
QS5U26TR
Manufacturer:
ROHM
Package:
SOT-23-5 Thin, TSOT-23-5
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 200m ? @ 1.5A, 4.5V ±12V 325pF @ 10V 4.2nC @ 4.5V 20V SOT-23-5 Thin, TSOT-23-5
Quantity:
In Stock :2925
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
QS5U26TR Information
ROHM QS5U26TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U26TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for ROHM QS5U26TR.
QS5U26TR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 325pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -2V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.
QS5U26TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -2V
a 20V drain to source voltage (Vdss)
QS5U26TR Applications
There are a lot of ROHM Semiconductor
QS5U26TR applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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