ROHM QS5U21TR

Manufacturer No:

QS5U21TR

Manufacturer:

ROHM

Package:

SOT-23-5 Thin, TSOT-23-5

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 200m ? @ 1.5A, 4.5V ±12V 325pF @ 10V 4.2nC @ 4.5V 20V SOT-23-5 Thin, TSOT-23-5

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QS5U21TR information

ROHM QS5U21TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U21TR.

Type
Parameter

Factory Lead Time
20 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SOT-23-5 Thin, TSOT-23-5

Number of Pins
5

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e1

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
5

Termination
SMD/SMT

ECCN Code
EAR99

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory
Other Transistors

Voltage - Rated DC
-20V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Current Rating
-1.5A

Pin Count
5

Number of Elements
1

Power Dissipation-Max
1.25W Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.25W

Turn On Delay Time
10 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
200m ? @ 1.5A, 4.5V

Vgs(th) (Max) @ Id
2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
325pF @ 10V

Current - Continuous Drain (Id) @ 25°C
1.5A Ta

Gate Charge (Qg) (Max) @ Vgs
4.2nC @ 4.5V

Rise Time
10ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V

Vgs (Max)
±12V

Fall Time (Typ)
10 ns

Turn-Off Delay Time
35 ns

Continuous Drain Current (ID)
1.5A

Gate to Source Voltage (Vgs)
12V

Drain-source On Resistance-Max
0.24Ohm

Download datasheets and manufacturer documentation for ROHM QS5U21TR.

QS5U21TR Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 325pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-20V. And this device has -20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.5V 4.5V), this device helps reduce its overall power consumption.

QS5U21TR Features

a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a 20V drain to source voltage (Vdss)

QS5U21TR Applications

There are a lot of ROHM Semiconductor
QS5U21TR applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

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