ROHM QS5U13TR
Manufacturer No:
QS5U13TR
Manufacturer:
ROHM
Package:
SOT-23-5 Thin, TSOT-23-5
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 100m ? @ 2A, 4.5V ±12V 175pF @ 10V 3.9nC @ 4.5V SOT-23-5 Thin, TSOT-23-5
Quantity:
In Stock :4939
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
QS5U13TR Information
ROHM QS5U13TR technical specifications, attributes, parameters and parts with similar specifications to ROHM QS5U13TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 30V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
Download datasheets and manufacturer documentation for ROHM QS5U13TR.
QS5U13TR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
QS5U13TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
QS5U13TR Applications
There are a lot of ROHM Semiconductor
QS5U13TR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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