PUCC21530QDWKQ1-Texas Instruments-Price, Stock & Datasheet

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz.

The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V.

This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low.

The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

AEC-Q100 qualified with:
- Device temperature grade 1
Functional Safety Quality-Managed
- Documentation available to aid functional safety system design
Universal: dual low-side, dual high-side or half-bridge driver
Wide body SOIC-14 (DWK) package
3.3mm spacing between driver channels
Switching parameters:
- 33ns typical propagation delay
- 20ns minimum pulse width
- 6ns maximum pulse-width distortion
Common-mode transient immunity (CMTI) greater than 125V/ns
4A peak source, 6A peak sink output
TTL and CMOS compatible inputs
3V to 18V input VCCI range
Up to 25V VDD output drive supply
- 8V,12V and 17V VDD UVLO options
Programmable overlap and dead time
Junction temperature range –40 to +150°C