Texas Instruments PTPSI2240QDWQRQ1
Manufacturer No:
PTPSI2240QDWQRQ1
Manufacturer:
Texas Instruments
Package:
Description:
Automotive 1200V, 50mA isolated switch with reinforced isolation and avalanche protection
Quantity:
In Stock :2687
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
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Date Code：Within 2 Years
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PTPSI2240QDWQRQ1 Information
Texas Instruments PTPSI2240QDWQRQ1 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments PTPSI2240QDWQRQ1.
- Type
- Parameter
- FET
- Internal
- Number of channels
- 1
- Supply voltage (min) (V)
- 4.5
- Supply voltage (max) (V)
- 20
- Rating
- Automotive
- Features
- 1mA avalanche current, Capacitive isolation
- Withstand isolation voltage (VISO) (Vrms)
- 4750
- Imax (mA)
- 50
- Ron (typ) (Ω)
- 130
- TI functional safety category
- Functional Safety-Capable
- Type
- Parameter
- Operating temperature range (°C)
- -40 to 125
- OFF-state leakage current (µA)
- 3.5
- Isolation rating
- Reinforced
- Surge isolation voltage (VIOSM) (VPK)
- 10000
- Working isolation voltage (VIOWM) (Vrms)
- 1000
- Package
- SOIC (DWQ)
- Pins
- 11
- Size
- 106.09 mm² 10.3 x 10.3
- REACH Status
- —
- RoHS Status
Download datasheets and manufacturer documentation for Texas Instruments PTPSI2240QDWQRQ1.
Data sheet:
EVM User's guide:
Certificate:
The TPSI2240-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2240-Q1 uses TI’s high reliability capacitive reinforced isolation technology in combination with internal back-to-back MOSFETs to form an integrated solution requiring no secondary side power supply.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5V – 20V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1V – 20V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2240-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2kV from S1 to S2. The TPSI2240-Q1 MOSFET’s avalanche robustness and thermally conscious package design, allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA without requiring any external components.
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI:
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2240-Q1 IAVA = 1mA for 60s pulses
- TPSI2240T-Q1 IAVA = 3mA for 60s pulses
- 1200V standoff voltage
- RON = 130Ω (TJ = 25°C)
- TON, TOFF < 700µs
- IOFF = 1.22µA at 1000V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5mA ON state current
- 3.5µA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1000VRMS / 1500VDC working voltage
- Reinforced Isolation rating, VISO, up to 3750VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-related certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
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