NEXPERIA PSMN6R5-25YLC,115

Manufacturer No:

PSMN6R5-25YLC,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.5m ? @ 20A, 10V ±20V 1093pF @ 12V 17.5nC @ 10V 25V SC-100, SOT-669

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PSMN6R5-25YLC,115 information

NEXPERIA PSMN6R5-25YLC,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN6R5-25YLC,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2011

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Terminal Finish
Tin (Sn)

Additional Feature
HIGH RELIABILITY

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Reach Compliance Code
not_compliant

Pin Count
4

Reference Standard
IEC-60134

JESD-30 Code
R-PSSO-G4

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
48W Tc

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
6.5m ? @ 20A, 10V

Vgs(th) (Max) @ Id
1.95V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
1093pF @ 12V

Current - Continuous Drain (Id) @ 25°C
64A Tc

Gate Charge (Qg) (Max) @ Vgs
17.5nC @ 10V

Drain to Source Voltage (Vdss)
25V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

JEDEC-95 Code
MO-235

Drain Current-Max (Abs) (ID)
64A

Drain-source On Resistance-Max
0.0085Ohm

Pulsed Drain Current-Max (IDM)
256A

DS Breakdown Voltage-Min
25V

Avalanche Energy Rating (Eas)
18 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PSMN6R5-25YLC,115.

PSMN6R5-25YLC,115 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 18 mJ.The maximum input capacitance of this device is 1093pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 64A.There is no pulsed drain current maximum for this device based on its rated peak drain current 256A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

PSMN6R5-25YLC,115 Features

the avalanche energy rating (Eas) is 18 mJ
based on its rated peak drain current 256A.
a 25V drain to source voltage (Vdss)

PSMN6R5-25YLC,115 Applications

There are a lot of Nexperia USA Inc.
PSMN6R5-25YLC,115 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

PURCHASE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.