NEXPERIA PSMN5R8-40YS,115

Manufacturer No:

PSMN5R8-40YS,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.7m ? @ 15A, 10V ±20V 1703pF @ 20V 28.8nC @ 10V SC-100, SOT-669

Quantity:

In Stock :Available

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Shipped from：HK Warehouse

Expected Shipping：Mon, Apr 27 - Tue, Apr 28, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PSMN5R8-40YS,115 Information

NEXPERIA PSMN5R8-40YS,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN5R8-40YS,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2010

JESD-609 Code
e3

Type
Parameter

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Pin Count
4

Number of Elements
1

Power Dissipation-Max
89W Tc

Element Configuration
Single

Download datasheets and manufacturer documentation for NEXPERIA PSMN5R8-40YS,115.

Datasheets:

nexperiausainc-psmn5r840ys115-datasheets-0293.pdf

nexperia-psmn5r840ys115-datasheets-0230.pdf

RohsStatement:

nexperia-pesd3v3c1bsfyl-rohsstatement-2649.pdf

PSMN5R8-40YS,115 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 65 mJ.A device's maximum input capacitance is 1703pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 90A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Its maximum pulsed drain current is 360A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

PSMN5R8-40YS,115 Features

the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 360A.