NEXPERIA PSMN4R0-40YS,115

Manufacturer No:

PSMN4R0-40YS,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Digi-Reel® 4.2m ? @ 15A, 10V ±20V 2410pF @ 20V 38nC @ 10V SC-100, SOT-669

Quantity:

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PSMN4R0-40YS,115 information

NEXPERIA PSMN4R0-40YS,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN4R0-40YS,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Weight
453.59237mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Digi-Reel®

Published
2010

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Resistance
5.6MOhm

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
40

Pin Count
4

Number of Elements
1

Power Dissipation-Max
106W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
106W

Case Connection
DRAIN

Turn On Delay Time
18 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
4.2m ? @ 15A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2410pF @ 20V

Current - Continuous Drain (Id) @ 25°C
100A Tc

Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V

Rise Time
19ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
12 ns

Turn-Off Delay Time
34 ns

Continuous Drain Current (ID)
100A

JEDEC-95 Code
MO-235

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
40V

Drain to Source Breakdown Voltage
40V

Avalanche Energy Rating (Eas)
77 mJ

Download datasheets and manufacturer documentation for NEXPERIA PSMN4R0-40YS,115.

PSMN4R0-40YS,115 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 77 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2410pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 34 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).

PSMN4R0-40YS,115 Features

the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 34 ns

PSMN4R0-40YS,115 Applications

There are a lot of Nexperia USA Inc.
PSMN4R0-40YS,115 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

User Guide

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.