NEXPERIA PSMN2R7-30PL,127
NEXPERIA PSMN2R7-30PL,127

NEXPERIA PSMN2R7-30PL,127

Manufacturer No:

PSMN2R7-30PL,127

Manufacturer:

NEXPERIA

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 2.7m ? @ 15A, 10V ±20V 3954pF @ 12V 66nC @ 10V TO-220-3

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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PSMN2R7-30PL,127 information

NEXPERIA PSMN2R7-30PL,127 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN2R7-30PL,127.

  • Type
  • Parameter
  • Factory Lead Time
  • 12 Weeks
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Surface Mount
  • NO
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~175°C TJ
  • Packaging
  • Tube
  • Published
  • 2010
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Resistance
  • 2.7MOhm
  • Terminal Finish
  • Tin (Sn)
  • Additional Feature
  • LOGIC LEVEL COMPATIBLE
  • Technology
  • MOSFET (Metal Oxide)
  • Pin Count
  • 3
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 170W Tc
  • Element Configuration
  • Single
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 170W
  • Case Connection
  • DRAIN
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 2.7m ? @ 15A, 10V
  • Vgs(th) (Max) @ Id
  • 2.15V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
  • 3954pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C
  • 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 66nC @ 10V
  • Rise Time
  • 80ns
  • Drive Voltage (Max Rds On,Min Rds On)
  • 4.5V 10V
  • Vgs (Max)
  • ±20V
  • Fall Time (Typ)
  • 35 ns
  • Turn-Off Delay Time
  • 75 ns
  • Continuous Drain Current (ID)
  • 100A
  • JEDEC-95 Code
  • TO-220AB
  • Gate to Source Voltage (Vgs)
  • 30V
  • Max Dual Supply Voltage
  • 30V
  • Drain to Source Breakdown Voltage
  • 30V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PSMN2R7-30PL,127.

Datasheets:

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PSMN2R7-30PL,127 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3954pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 75 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 46 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In addition to 30V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

PSMN2R7-30PL,127 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 75 ns


PSMN2R7-30PL,127 Applications


There are a lot of Nexperia USA Inc.
PSMN2R7-30PL,127 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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