NEXPERIA PSMN1R7-30YL,115
Manufacturer No:
PSMN1R7-30YL,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.7m ? @ 15A, 10V ±20V 5057pF @ 12V 77.9nC @ 10V 30V SC-100, SOT-669
Quantity:
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PSMN1R7-30YL,115 Information
NEXPERIA PSMN1R7-30YL,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN1R7-30YL,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- JESD-609 Code
- e3
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- HTS Code
- 8541.29.00.75
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for NEXPERIA PSMN1R7-30YL,115.
Datasheets:
PCN Packaging:
RohsStatement:
PSMN1R7-30YL,115 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 241 mJ.The maximum input capacitance of this device is 5057pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.There is no pulsed drain current maximum for this device based on its rated peak drain current 790A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
PSMN1R7-30YL,115 Features
the avalanche energy rating (Eas) is 241 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 790A.
a 30V drain to source voltage (Vdss)
PSMN1R7-30YL,115 Applications
There are a lot of Nexperia USA Inc.
PSMN1R7-30YL,115 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
PSMN1R7-30YL,115 Relevant information
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