NEXPERIA PSMN1R7-25YLDX
Manufacturer No:
PSMN1R7-25YLDX
Manufacturer:
NEXPERIA
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.7m ? @ 25A, 10V ±20V 3415pF @ 12V 46.7nC @ 10V 25V SC-100, SOT-669
Quantity:
In Stock :4164
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
PSMN1R7-25YLDX Information
NEXPERIA PSMN1R7-25YLDX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN1R7-25YLDX.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 4
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 4
- Reference Standard
- IEC-60134
- JESD-30 Code
- R-PSSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for NEXPERIA PSMN1R7-25YLDX.
Datasheets:
PCN Packaging:
RohsStatement:
PSMN1R7-25YLDX Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 746 mJ.A device's maximal input capacitance is 3415pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 860A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
PSMN1R7-25YLDX Features
the avalanche energy rating (Eas) is 746 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 860A.
a 25V drain to source voltage (Vdss)
PSMN1R7-25YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN1R7-25YLDX applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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