

NEXPERIA PSMN1R2-30YLDX
Manufacturer No:
PSMN1R2-30YLDX
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.24m ? @ 25A, 10V ±20V 4616pF @ 15V 68nC @ 10V SC-100, SOT-669
Quantity:
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PSMN1R2-30YLDX Information
NEXPERIA PSMN1R2-30YLDX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN1R2-30YLDX.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2014
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Pin Count
- 4
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 194W Tc
- Element Configuration
- Single
Download datasheets and manufacturer documentation for NEXPERIA PSMN1R2-30YLDX.
Datasheets:
PCN Packaging:
ReachStatement:
PSMN1R2-30YLDX Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4616pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
PSMN1R2-30YLDX Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38.7 ns
PSMN1R2-30YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN1R2-30YLDX applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
PSMN1R2-30YLDX Relevant information
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