NEXPERIA PSMN025-100D,118

Manufacturer No:

PSMN025-100D,118

Manufacturer:

NEXPERIA

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

N-Channel Tape & Reel (TR) 25m Ω @ 25A, 10V ±20V 2600pF @ 25V 61nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

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PSMN025-100D,118 information

NEXPERIA PSMN025-100D,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN025-100D,118.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
47A Tc

Drive Voltage (Max Rds On, Min Rds On)
10V

Number of Elements
1

Power Dissipation (Max)
150W Tc

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchMOS™

Published
2011

JESD-609 Code
e3

Part Status
Last Time Buy

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

HTS Code
8541.29.00.75

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

JESD-30 Code
R-PSSO-G2

Qualification Status
Not Qualified

Configuration
SINGLE WITH BUILT-IN DIODE

Operating Mode
ENHANCEMENT MODE

Power Dissipation
150W

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
25m Ω @ 25A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V

Drain to Source Voltage (Vdss)
100V

Vgs (Max)
±20V

Continuous Drain Current (ID)
47A

Drain-source On Resistance-Max
0.025Ohm

Pulsed Drain Current-Max (IDM)
188A

DS Breakdown Voltage-Min
100V

Avalanche Energy Rating (Eas)
260 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PSMN025-100D,118.

PSMN025-100D,118 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 260 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2600pF @ 25V.This device has a continuous drain current (ID) of [47A], which is its maximum continuous current.A maximum pulsed drain current of 188A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).

PSMN025-100D,118 Features

the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 47A
based on its rated peak drain current 188A.
a 100V drain to source voltage (Vdss)

PSMN025-100D,118 Applications

There are a lot of Nexperia USA Inc.
PSMN025-100D,118 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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