NEXPERIA PSMN011-30YLC,115

Manufacturer No:

PSMN011-30YLC,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11.6m ? @ 10A, 10V ±20V 641pF @ 15V 10.3nC @ 10V SC-100, SOT-669

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PSMN011-30YLC,115 information

NEXPERIA PSMN011-30YLC,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN011-30YLC,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2013

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Terminal Finish
Tin (Sn)

Additional Feature
HIGH RELIABILITY

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Pin Count
4

Number of Elements
1

Power Dissipation-Max
29W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
29W

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
11.6m ? @ 10A, 10V

Vgs(th) (Max) @ Id
1.95V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
641pF @ 15V

Current - Continuous Drain (Id) @ 25°C
37A Tc

Gate Charge (Qg) (Max) @ Vgs
10.3nC @ 10V

Rise Time
12.7ns

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
6.6 ns

Turn-Off Delay Time
16.8 ns

Continuous Drain Current (ID)
37A

JEDEC-95 Code
MO-235

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
30V

Drain to Source Breakdown Voltage
30V

Pulsed Drain Current-Max (IDM)
150A

Avalanche Energy Rating (Eas)
9 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PSMN011-30YLC,115.

PSMN011-30YLC,115 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 9 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 641pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 37A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16.8 ns.Peak drain current for this device is 150A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13.4 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

PSMN011-30YLC,115 Features

the avalanche energy rating (Eas) is 9 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16.8 ns
based on its rated peak drain current 150A.

PSMN011-30YLC,115 Applications

There are a lot of Nexperia USA Inc.
PSMN011-30YLC,115 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

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