

ONSEMI PN4917
Manufacturer No:
PN4917
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
PNP -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
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PN4917 information
ONSEMI PN4917 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI PN4917.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins
- 3
- Weight
- 201mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Published
- 1997
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -30V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Terminal Form
- WIRE
- Reach Compliance Code
- unknown
- Current Rating
- -50mA
- Base Part Number
- PN4917
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 625mW
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 30V
- Max Collector Current
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 10mA 1V
- Current - Collector Cutoff (Max)
- 25nA
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage
- 30V
- Transition Frequency
- 450MHz
- Collector Emitter Saturation Voltage
- 300mV
- Collector Base Voltage (VCBO)
- 30V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 150
- Collector-Base Capacitance-Max
- 4.5pF
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ONSEMI PN4917.
Datasheets:
ReachStatement:
PN4917 Overview
This device has a DC current gain of 150 @ 10mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 450MHz.A maximum collector current of 200mA volts is possible.
PN4917 Features
the DC current gain for this device is 150 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 450MHz
PN4917 Applications
There are a lot of ON Semiconductor
PN4917 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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