

NEXPERIA PMST3906,115
Manufacturer No:
PMST3906,115
Manufacturer:
Package:
SC-70, SOT-323
Description:
PNP 150°C TJ 50nA ICBO 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
Quantity:
Delivery:




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PMST3906,115 information
NEXPERIA PMST3906,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PMST3906,115.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Weight
- 453.59237mg
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 40V
- Number of Elements
- 1
- hFEMin
- 60
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101
- Published
- 2009
- Tolerance
- 5%
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 200mW
- Terminal Position
- DUAL
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 250MHz
- Time@Peak Reflow Temperature-Max (s)
- 30
- Base Part Number
- PMST3906
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 200mW
- Transistor Application
- SWITCHING
- Test Current
- 8mA
- Gain Bandwidth Product
- 250MHz
- Polarity/Channel Type
- PNP
- Zener Voltage
- 36V
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 10mA 1V
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 50mA
- Transition Frequency
- 250MHz
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 6V
- Outside Diameter
- 2.6 mm
Download datasheets and manufacturer documentation for NEXPERIA PMST3906,115.
Datasheets:
PCN Packaging:
RohsStatement:
PMST3906,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
PMST3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
PMST3906,115 Applications
There are a lot of Nexperia USA Inc.
PMST3906,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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