NEXPERIA PMBF170,215

Manufacturer No:

PMBF170,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5 ? @ 500mA, 10V ±20V 40pF @ 10V TO-236-3, SC-59, SOT-23-3

Quantity:

Delivery:

Payment:

In Stock :Available

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PMBF170,215 information

NEXPERIA PMBF170,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PMBF170,215.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-65°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchMOS?

Published
1997

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Resistance
5Ohm

Additional Feature
LOGIC LEVEL COMPATIBLE

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Pin Count
3

Number of Elements
1

Power Dissipation-Max
830mW Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
830mW

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
5 ? @ 500mA, 10V

Vgs(th) (Max) @ Id
2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
40pF @ 10V

Current - Continuous Drain (Id) @ 25°C
300mA Ta

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Continuous Drain Current (ID)
300mA

Threshold Voltage
2V

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
60V

Drain to Source Breakdown Voltage
60V

Nominal Vgs
2 V

Min Breakdown Voltage
60V

Height
1mm

Length
3mm

Width
1.4mm

REACH SVHC
No SVHC

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PMBF170,215.

PMBF170,215 Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 40pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 300mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

PMBF170,215 Features

a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
a threshold voltage of 2V

PMBF170,215 Applications

There are a lot of Nexperia USA Inc.
PMBF170,215 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

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