NXP PHB78NQ03LT,118
Manufacturer No:
PHB78NQ03LT,118
Manufacturer:
NXP
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9m ? @ 25A, 10V ±20V 970pF @ 12V 11nC @ 4.5V 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :6862
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PHB78NQ03LT,118 Information
NXP PHB78NQ03LT,118 technical specifications, attributes, parameters and parts with similar specifications to NXP PHB78NQ03LT,118.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS?
- Published
- 2005
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- TIN
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
Download datasheets and manufacturer documentation for NXP PHB78NQ03LT,118.
Datasheets:
PHB78NQ03LT,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 185 mJ.A device's maximum input capacitance is 970pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 40A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 160A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
PHB78NQ03LT,118 Features
the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 160A.
a 25V drain to source voltage (Vdss)
PHB78NQ03LT,118 Applications
There are a lot of NXP USA Inc.
PHB78NQ03LT,118 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
