NXP PH3120L,115-NXP

Manufacturer No:

PH3120L,115-NXP

Manufacturer:

NXP

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel 2.65mOhm @ 25A, 10V ±20V 4457 pF @ 10 V 48.5 nC @ 4.5 V 20 V SC-100, SOT-669

Quantity:

In Stock :4622

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Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PH3120L,115-NXP Information

NXP PH3120L,115-NXP technical specifications, attributes, parameters and parts with similar specifications to NXP PH3120L,115-NXP.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Supplier Device Package
LFPAK56, Power-SO8

Mfr
NXP USA Inc.

Package
Bulk

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
62.5W (Tc)

Series
TrenchMOS?

Operating Temperature
-55°C ~ 150°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2.65mOhm @ 25A, 10V

Vgs(th) (Max) @ Id
2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
4457 pF @ 10 V

Current - Continuous Drain (Id) @ 25°C
100A (Tc)

Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 4.5 V

Drain to Source Voltage (Vdss)
20 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for NXP PH3120L,115-NXP.

PH3120L,115-NXP Overview

The maximum input capacitance of this device is 4457 pF @ 10 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 20 V in order to operate.