NXP PH1955L,115
Manufacturer No:
PH1955L,115
Manufacturer:
NXP
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 17.3m ? @ 25A, 10V ±15V 1992pF @ 25V 18nC @ 5V 55V SC-100, SOT-669
Quantity:
In Stock :1092
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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PH1955L,115 Information
NXP PH1955L,115 technical specifications, attributes, parameters and parts with similar specifications to NXP PH1955L,115.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS?
- Published
- 2009
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- TIN
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for NXP PH1955L,115.
Environmental Information:
PH1955L,115 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1992pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 40A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 160A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
PH1955L,115 Features
the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 160A.
a 55V drain to source voltage (Vdss)
PH1955L,115 Applications
There are a lot of NXP USA Inc.
PH1955L,115 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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